APTM120A80FT1G
Microsemi Corporation
Microsemi Corporation
MOSFET 2N-CH 1200V 14A SP1
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Discover the high-performance APTM120A80FT1G from Microsemi Corporation, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the APTM120A80FT1G delivers unmatched performance. Trust Microsemi Corporation's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 14A
- Rds On (Max) @ Id, Vgs: 960mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6696pF @ 25V
- Power - Max: 357W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
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