APTM120U10DAG
Microsemi Corporation
Microsemi Corporation
MOSFET N-CH 1200V 160A SP6
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Enhance your electronic projects with the APTM120U10DAG single MOSFET from Microsemi Corporation. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Microsemi Corporation's APTM120U10DAG for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 120mOhm @ 58A, 10V
- Vgs(th) (Max) @ Id: 5V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 1100 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 28900 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3290W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SP6
- Package / Case: SP6
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