APTM120UM95FAG
Microsemi Corporation
Microsemi Corporation
MOSFET N-CH 1200V 103A SP6
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The APTM120UM95FAG from Microsemi Corporation sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Microsemi Corporation's APTM120UM95FAG for their critical applications.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 114mOhm @ 51.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 15mA
- Gate Charge (Qg) (Max) @ Vgs: 1122 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 30900 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2272W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SP6
- Package / Case: SP6
Related Products
Micro Commercial Co
MCG60N03Y-TP
Infineon Technologies
IPC60R385CPX1SA1
Nexperia USA Inc.
PMCM440VNE/S500Z
Alpha & Omega Semiconductor Inc.
AON7452L
Renesas Electronics America Inc
2SJ602-Z-AZ
NXP USA Inc.
NX2020P1X
Renesas Electronics America Inc
RJK03M0DPA-WS#J5A
Harris Corporation
RF1S30N06LESM9A
NXP USA Inc.
PH4030AL115
Alpha & Omega Semiconductor Inc.