Shopping cart

Subtotal: $0.00

APTM20DAM10TG

Microsemi Corporation
APTM20DAM10TG Preview
Microsemi Corporation
MOSFET N-CH 200V 175A SP4
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 175A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 87.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 694W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP4
  • Package / Case: SP4

Related Products

Infineon Technologies

IRFC4332ED

Microsemi Corporation

JANTXV2N6849U

Rohm Semiconductor

R6535KNZC8

Renesas Electronics America Inc

2SJ302-AZ

Microsemi Corporation

APT4012BVRG

Rohm Semiconductor

R6021ANZC8

Rohm Semiconductor

ES6U41FU7T2CR

Alpha & Omega Semiconductor Inc.

AONS36386

Top