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APTM50AM19STG

Microsemi Corporation
APTM50AM19STG Preview
Microsemi Corporation
MOSFET 2N-CH 500V 170A SP4
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Specifications

  • Product Status: Discontinued at Digi-Key
  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 170A
  • Rds On (Max) @ Id, Vgs: 19mOhm @ 85A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 492nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 22400pF @ 25V
  • Power - Max: 1250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4

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