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APTMC120HRM40CT3AG

Microchip Technology
APTMC120HRM40CT3AG Preview
Microchip Technology
POWER MODULE - SIC MOSFET
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Specifications

  • Product Status: Active
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
  • Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
  • Vgs(th) (Max) @ Id: 3V @ 12.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 161nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2788pF @ 1000V
  • Power - Max: 375W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP3

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