APTSM120AM09CD3AG
Microsemi Corporation
Microsemi Corporation
MOSFET 2 N-CH 1200V 337A MODULE
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Reference Price (USD)
100+
$615.88880
Exquisite packaging
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Upgrade your electronic designs with the APTSM120AM09CD3AG by Microsemi Corporation, a standout in the Discrete Semiconductor Products category. Specifically designed as a Transistors - FETs, MOSFETs - Arrays solution, this component excels in high-frequency applications with its low on-resistance and fast switching capabilities. Perfect for use in power supplies, motor control, and LED lighting systems, the APTSM120AM09CD3AG ensures energy efficiency and robust performance. Microsemi Corporation's commitment to quality makes this MOSFET array a top choice for engineers and designers worldwide.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
- Rds On (Max) @ Id, Vgs: 11mOhm @ 180A, 20V
- Vgs(th) (Max) @ Id: 3V @ 9mA
- Gate Charge (Qg) (Max) @ Vgs: 1224nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 1000V
- Power - Max: -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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