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APTSM120AM14CD3AG

Microsemi Corporation
APTSM120AM14CD3AG Preview
Microsemi Corporation
POWER MODULE - SIC
$0.00
Available to order
Reference Price (USD)
100+
$432.81150
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: 2 N-Channel (Dual), Schottky
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 180A, 20V
  • Vgs(th) (Max) @ Id: 3V @ 9mA
  • Gate Charge (Qg) (Max) @ Vgs: 1224nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 1000V
  • Power - Max: 2140W
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module

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