APTSM120AM14CD3AG
Microsemi Corporation
Microsemi Corporation
POWER MODULE - SIC
$0.00
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Reference Price (USD)
100+
$432.81150
Exquisite packaging
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Discover the high-performance APTSM120AM14CD3AG from Microsemi Corporation, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the APTSM120AM14CD3AG delivers unmatched performance. Trust Microsemi Corporation's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual), Schottky
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
- Rds On (Max) @ Id, Vgs: 11mOhm @ 180A, 20V
- Vgs(th) (Max) @ Id: 3V @ 9mA
- Gate Charge (Qg) (Max) @ Vgs: 1224nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 1000V
- Power - Max: 2140W
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module