APTSM120AM55CT1AG
Microsemi Corporation
Microsemi Corporation
POWER MODULE - SIC
$0.00
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Reference Price (USD)
100+
$142.05440
Exquisite packaging
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Choose the APTSM120AM55CT1AG from Microsemi Corporation for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the APTSM120AM55CT1AG stands out for its reliability and efficiency. Microsemi Corporation's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual), Schottky
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
- Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 3V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 272nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 5120pF @ 1000V
- Power - Max: 470W
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
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Microsemi Corporation