AS4C8M16S-6BIN
Alliance Memory, Inc.
Alliance Memory, Inc.
IC DRAM 128MBIT PARALLEL 54TFBGA
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The AS4C8M16S-6BIN from Alliance Memory, Inc. is a high-performance Memory IC designed for modern electronic applications. This integrated circuit offers exceptional data storage and retrieval capabilities, making it ideal for devices requiring fast and reliable memory solutions. With advanced technology and robust construction, the AS4C8M16S-6BIN ensures longevity and consistent performance in various environments.
Memory ICs like the AS4C8M16S-6BIN are essential components in today's digital world, providing the necessary storage for data-intensive operations. These ICs feature low power consumption, high-speed access, and compact designs, catering to the growing demand for efficient memory solutions. Whether used in consumer electronics or industrial systems, the AS4C8M16S-6BIN delivers unmatched reliability and efficiency.
The AS4C8M16S-6BIN is widely used in applications such as smartphones, tablets, computers, and automotive systems. For instance, it can be found in smart devices where quick data access is crucial, or in automotive control units that require durable and high-speed memory. Its versatility and performance make it a top choice for engineers and designers looking for premium Memory ICs.
Specifications
- Product Status: Obsolete
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM
- Memory Size: 128Mb (8M x 16)
- Memory Interface: Parallel
- Clock Frequency: 166 MHz
- Write Cycle Time - Word, Page: 2ns
- Access Time: 5 ns
- Voltage - Supply: 3V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 54-TFBGA
- Supplier Device Package: 54-TFBGA (8x8)
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