Shopping cart

Subtotal: $0.00

AUIRFS6535

Infineon Technologies
AUIRFS6535 Preview
Infineon Technologies
MOSFET N-CH 300V 19A D2PAK
$0.00
Available to order
Reference Price (USD)
3,000+
$1.57872
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300 V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 185mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 210W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Products

Taiwan Semiconductor Corporation

TSM1N45CT B0G

Infineon Technologies

IRFSL4310PBF

STMicroelectronics

STP40N20

Vishay Siliconix

IRFZ24STRL

Diotec Semiconductor

DIW085N06

Fairchild Semiconductor

HUFA76419D3S

Infineon Technologies

IPB06P001LATMA1

Microsemi Corporation

APT11N80KC3G

Nexperia USA Inc.

PMPB100XPEAX

Top