B125C800G-E4/51
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1P 200V 900MA WOG
$0.34
Available to order
Reference Price (USD)
3,000+
$0.29047
Exquisite packaging
Discount
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Optimize your power conversion systems with the B125C800G-E4/51 bridge rectifier diode from Vishay General Semiconductor - Diodes Division. This high-efficiency diode, part of the Diodes - Bridge Rectifiers subcategory, ensures minimal energy loss and maximum reliability. Ideal for use in telecommunications, medical devices, and automotive electronics, the B125C800G-E4/51 offers fast switching and low forward voltage. Vishay General Semiconductor - Diodes Division's dedication to innovation in Discrete Semiconductor Products means you get a component that outperforms the competition. Upgrade your designs with the B125C800G-E4/51 for unmatched performance.
Specifications
- Product Status: Active
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 200 V
- Current - Average Rectified (Io): 900 mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 900 mA
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-Circular, WOG
- Supplier Device Package: WOG
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