B80C800GL-801E4/51
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
GLASS PASSIVATED BRIDGE RECT WOG
$0.71
Available to order
Reference Price (USD)
1+
$0.71000
500+
$0.7029
1000+
$0.6958
1500+
$0.6887
2000+
$0.6816
2500+
$0.6745
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power conversion systems with the B80C800GL-801E4/51 bridge rectifier diode from Vishay General Semiconductor - Diodes Division. This high-efficiency diode, part of the Diodes - Bridge Rectifiers subcategory, ensures minimal energy loss and maximum reliability. Ideal for use in telecommunications, medical devices, and automotive electronics, the B80C800GL-801E4/51 offers fast switching and low forward voltage. Vishay General Semiconductor - Diodes Division's dedication to innovation in Discrete Semiconductor Products means you get a component that outperforms the competition. Upgrade your designs with the B80C800GL-801E4/51 for unmatched performance.
Specifications
- Product Status: Active
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 125 V
- Current - Average Rectified (Io): 900 mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 900 mA
- Current - Reverse Leakage @ Vr: 10 µA @ 125 V
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-Circular, WOG
- Supplier Device Package: WOG
Related Products
Microchip Technology
APTDF100H601G
Semtech Corporation
3SBMB05F
Micro Commercial Co
GBJA1504-BP
Semtech Corporation
SCBAR1F
GeneSiC Semiconductor
GBPC1506T
Micro Commercial Co
LMB24S-TP
Comchip Technology
DF02-G
Comchip Technology
CSPB40M-HF
EIC SEMICONDUCTOR INC.
KBL406M
IXYS