BA479S-TR
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
RF DIODE PIN 30V DO35
$0.16
Available to order
Reference Price (USD)
50,000+
$0.13300
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BA479S-TR RF Diode by Vishay General Semiconductor - Diodes Division is a versatile and efficient solution in the Diodes - RF segment of Discrete Semiconductor Products. With its high breakdown voltage and fast recovery time, it is ideal for RF power amplifiers and mixers. Applications range from consumer electronics to industrial automation, showcasing its adaptability. Trust Vishay General Semiconductor - Diodes Division to provide a diode that combines performance, durability, and cutting-edge technology for all your RF needs.
Specifications
- Product Status: Active
- Diode Type: PIN - Single
- Voltage - Peak Reverse (Max): 30V
- Current - Max: 50 mA
- Capacitance @ Vr, F: 0.5pF @ 0V, 100MHz
- Resistance @ If, F: 50Ohm @ 1.5mA, 100MHz
- Power Dissipation (Max): -
- Operating Temperature: 125°C (TJ)
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35 (DO-204AH)
Related Products
Microchip Technology
MPL4700-206/TR
Comchip Technology
CPINF5204-HF
Infineon Technologies
BAR6402ELE6327XTMA1
Infineon Technologies
BA885E6327
Skyworks Solutions Inc.
SMPA1302-079LF
MACOM Technology Solutions
MA144769-287T
MACOM Technology Solutions
MA4L401-30
Microchip Technology
MPP4201A-206/TR
Microchip Technology
LXS301-23-4/TR
Skyworks Solutions Inc.