BA892E6770
Infineon Technologies
Infineon Technologies
MIXER DIODE, VERY HIGH FREQUENCY
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Discover the high-performance BA892E6770 RF Diode from Infineon Technologies, designed for precision and reliability in radio frequency applications. As a key component in the Discrete Semiconductor Products category, this diode excels in signal detection, mixing, and switching. Its superior frequency response and low noise characteristics make it ideal for demanding RF circuits. Commonly used in communication systems, radar, and wireless devices, the BA892E6770 ensures optimal performance in applications such as mobile base stations and satellite receivers. Trust Infineon Technologies's expertise for cutting-edge RF diode solutions.
Specifications
- Product Status: Active
- Diode Type: Standard - Single
- Voltage - Peak Reverse (Max): 35V
- Current - Max: 100 mA
- Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
- Resistance @ If, F: 500mOhm @ 10mA, 100MHz
- Power Dissipation (Max): -
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-80
- Supplier Device Package: PG-SCD80-2
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