BAS21UE6327
Infineon Technologies
Infineon Technologies
HIGH SPEED SWITCHING DIODE
$0.09
Available to order
Reference Price (USD)
1+
$0.09000
500+
$0.0891
1000+
$0.0882
1500+
$0.0873
2000+
$0.0864
2500+
$0.0855
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, Infineon Technologies's BAS21UE6327 represents the next generation of rectifier diode arrays. This Discrete Semiconductor Product features innovative passivation layers that enhance reliability in humid conditions. Its primary applications include marine electronics, oil drilling equipment, and military power systems where corrosion resistance is paramount. With Infineon Technologies's proprietary screening processes, the BAS21UE6327 guarantees exceptional performance in the most challenging electrical environments.
Specifications
- Product Status: Active
- Diode Configuration: 3 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io) (per Diode): 250mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 100 nA @ 200 V
- Operating Temperature - Junction: 150°C (Max)
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: PG-SC74-6
Related Products
GeneSiC Semiconductor
MBRT600150R
Micro Commercial Co
MBR20200CT-BP
Diodes Incorporated
SDT20100GCTFP
Panjit International Inc.
SB1020DC_R2_00001
onsemi
FFB20UP20DN-F085
Diodes Incorporated
PDS1040CTL-13
GeneSiC Semiconductor
MBRT30060R
Nexperia USA Inc.
BAT721A,235
IXYS
DSA20C100PB
Nexperia USA Inc.