BAS386-TR
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE SCHOTT 50V 200MA MICROMELF
$0.47
Available to order
Reference Price (USD)
2,500+
$0.07359
5,000+
$0.06699
12,500+
$0.06039
25,000+
$0.05709
62,500+
$0.05379
Exquisite packaging
Discount
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Enhance your circuit performance with the BAS386-TR single rectifier diode from Vishay General Semiconductor - Diodes Division. This Discrete Semiconductor Product is engineered for precision and efficiency, offering low forward voltage and high surge tolerance. Ideal for rectification in power adapters, welding equipment, and UPS systems, the BAS386-TR delivers consistent results under heavy loads. Its applications extend to aerospace and defense systems, where reliability cannot be compromised. Vishay General Semiconductor - Diodes Division's BAS386-TR is the go-to choice for engineers seeking robust and high-performing rectifier diodes.
Specifications
- Product Status: Active
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 40 V
- Capacitance @ Vr, F: 880pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, No Lead
- Supplier Device Package: MicroMELF
- Operating Temperature - Junction: 125°C (Max)
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