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BAS516,H3F

Toshiba Semiconductor and Storage
BAS516,H3F Preview
Toshiba Semiconductor and Storage
DIODE GEN PURP 100V 250MA ESC
$0.03
Available to order
Reference Price (USD)
4,000+
$0.03060
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3 ns
  • Current - Reverse Leakage @ Vr: 200 nA @ 80 V
  • Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: ESC
  • Operating Temperature - Junction: 150°C (Max)

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