BAV170HYFHT116
Rohm Semiconductor
Rohm Semiconductor
LOW-LEAKAGE, 80V, 215MA, SOT-23,
$0.47
Available to order
Reference Price (USD)
1+
$0.47000
500+
$0.4653
1000+
$0.4606
1500+
$0.4559
2000+
$0.4512
2500+
$0.4465
Exquisite packaging
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The BAV170HYFHT116 from Rohm Semiconductor sets new benchmarks in the Discrete Semiconductor Products market. This rectifier array incorporates advanced epitaxial growth technology for superior reverse recovery characteristics. Perfect for high-efficiency adapters, induction heating, and plasma cutting equipment, it offers outstanding thermal cycling performance. Rohm Semiconductor's rigorous quality control ensures the BAV170HYFHT116 maintains consistent parameters across production batches for design-in reliability.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80 V
- Current - Average Rectified (Io) (per Diode): 215mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3 µs
- Current - Reverse Leakage @ Vr: 5 nA @ 75 V
- Operating Temperature - Junction: 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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Rohm Semiconductor