BAV23C-HE3-18
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 200MA SOT23
$0.05
Available to order
Reference Price (USD)
10,000+
$0.05269
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, Vishay General Semiconductor - Diodes Division's BAV23C-HE3-18 represents the next generation of rectifier diode arrays. This Discrete Semiconductor Product features innovative passivation layers that enhance reliability in humid conditions. Its primary applications include marine electronics, oil drilling equipment, and military power systems where corrosion resistance is paramount. With Vishay General Semiconductor - Diodes Division's proprietary screening processes, the BAV23C-HE3-18 guarantees exceptional performance in the most challenging electrical environments.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io) (per Diode): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 100 nA @ 200 V
- Operating Temperature - Junction: 150°C (Max)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
Related Products
Vishay General Semiconductor - Diodes Division
VBT6045CBP-E3/8W
Panjit International Inc.
SBM1045VDC_R2_00001
Rohm Semiconductor
RB085T-40HZC9
Panjit International Inc.
MBR10150DC_R2_00001
Taiwan Semiconductor Corporation
MMBD4148SE RFG
Panjit International Inc.
BD680CS_L2_00001
Panjit International Inc.
BD1040CS_S2_00001
Vishay General Semiconductor - Diodes Division
VS-MBRB20100CTRHM3
onsemi
NTST20U100CTG
SMC Diode Solutions