BC618,112
NXP USA Inc.
NXP USA Inc.
TRANS NPN DARL 55V 0.5A TO-92
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with the BC618,112 Bipolar Junction Transistor (BJT) from NXP USA Inc.. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The BC618,112 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust NXP USA Inc. to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 55 V
- Vce Saturation (Max) @ Ib, Ic: 1.1V @ 200µA, 200mA
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 200mA, 5V
- Power - Max: 625 mW
- Frequency - Transition: 155MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92-3
Related Products
Diodes Incorporated
BC847BT-7
Toshiba Semiconductor and Storage
2SA1680,T6ASTIF(J
Micro Commercial Co
TIP102-BP
Micro Commercial Co
BC636-16-BP
onsemi
MPS6562
Microchip Technology
JANKCBR2N3700
onsemi
BC213L_D27Z
onsemi
BD18010STU
Bourns Inc.
BD545A-S
onsemi