BC635,112
NXP USA Inc.
NXP USA Inc.
TRANS NPN 45V 1A TO92-3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BC635,112 from NXP USA Inc. is a high-performance Bipolar Junction Transistor (BJT) designed for a wide range of electronic applications. This discrete semiconductor product offers excellent amplification and switching capabilities, making it ideal for both low-power and high-power circuits. With its robust construction and reliable performance, the BC635,112 ensures long-term durability and efficiency. Whether you're designing audio amplifiers, power supplies, or motor control systems, this BJT transistor delivers consistent results. Explore the versatility of BC635,112 and enhance your electronic projects with this top-quality component from NXP USA Inc..
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
- Power - Max: 830 mW
- Frequency - Transition: 180MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92-3
Related Products
onsemi
MPS2907ARL
onsemi
2N3704_D27Z
Microsemi Corporation
JANTXV2N5012
Infineon Technologies
BC 856BW H6433
onsemi
BDW42
onsemi
2N3905TA
Micro Commercial Co
2SA733-Q-AP
Diodes Incorporated
BCX38CSTOA
Microchip Technology
2N2905AL
Panasonic Electronic Components