BC639,112
NXP USA Inc.
NXP USA Inc.
TRANS NPN 80V 1A TO92-3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience unmatched performance with the BC639,112 Bipolar Junction Transistor (BJT) by NXP USA Inc.. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the BC639,112 delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose NXP USA Inc. for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
- Power - Max: 830 mW
- Frequency - Transition: 180MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92-3
Related Products
onsemi
KSC2334RTU
Rohm Semiconductor
2SD2098T100S
onsemi
2N4403_J05Z
Microchip Technology
JANTXV2N6438
onsemi
KSA643CYBU
onsemi
2SD1816S-TL-EX
Rohm Semiconductor
2SB1443TV2Q
Panasonic Electronic Components
2SD0601ARL
Diodes Incorporated
BCV27TC
onsemi