BC80825WE6327HTSA1
Infineon Technologies
Infineon Technologies
TRANS PNP 25V 0.5A SOT323
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The BC80825WE6327HTSA1 from Infineon Technologies is a high-performance Bipolar Junction Transistor (BJT) designed for a wide range of electronic applications. This discrete semiconductor product offers excellent amplification and switching capabilities, making it ideal for both low-power and high-power circuits. With its robust construction and reliable performance, the BC80825WE6327HTSA1 ensures long-term durability and efficiency. Whether you're designing audio amplifiers, power supplies, or motor control systems, this BJT transistor delivers consistent results. Explore the versatility of BC80825WE6327HTSA1 and enhance your electronic projects with this top-quality component from Infineon Technologies.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 25 V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
- Power - Max: 250 mW
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323
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