BC817K-40WE6327
Infineon Technologies
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
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Enhance your circuit designs with the BC817K-40WE6327 Bipolar Junction Transistor (BJT) from Infineon Technologies. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The BC817K-40WE6327 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Infineon Technologies to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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