BC847BU3HZGT106
Rohm Semiconductor
Rohm Semiconductor
TRANS NPN 45V 0.1A UMT3
$0.38
Available to order
Reference Price (USD)
1+
$0.38000
500+
$0.3762
1000+
$0.3724
1500+
$0.3686
2000+
$0.3648
2500+
$0.361
Exquisite packaging
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Optimize your electronic systems with the BC847BU3HZGT106 Bipolar Junction Transistor (BJT) from Rohm Semiconductor. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the BC847BU3HZGT106 delivers superior performance in diverse environments. Rohm Semiconductor's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 200 mW
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: UMT3
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