BC847BWQ-13-F
Diodes Incorporated
Diodes Incorporated
GENERAL PURPOSE TRANSISTOR SOT32
$0.03
Available to order
Reference Price (USD)
1+
$0.02671
500+
$0.0264429
1000+
$0.0261758
1500+
$0.0259087
2000+
$0.0256416
2500+
$0.0253745
Exquisite packaging
Discount
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Upgrade your electronic designs with the BC847BWQ-13-F Bipolar Junction Transistor (BJT) by Diodes Incorporated. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the BC847BWQ-13-F is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust Diodes Incorporated for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 200 mW
- Frequency - Transition: 300MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
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