BC847QASX
NXP USA Inc.
NXP USA Inc.
TRANS NPN/PNP 45V 0.1A 6DFN
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The BC847QASX BJT Array from NXP USA Inc. brings military-grade robustness to commercial applications. With a wide operating temperature range (-55 C to +150 C), this Discrete Semiconductor Product performs flawlessly in downhole drilling equipment and satellite subsystems. Its symmetrical layout simplifies heat sink integration for high-power RF amplifiers. The BC847QASX undergoes rigorous Q-Class testing to guarantee radiation hardness for aerospace deployments.
Specifications
- Product Status: Active
- Transistor Type: NPN, PNP Complementary
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 230mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-XFDFN Exposed Pad
- Supplier Device Package: DFN1010B-6
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