BC847SH6730XTMA1
Infineon Technologies
Infineon Technologies
TRANSISTOR NPN DUAL SOT363
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The BC847SH6730XTMA1 by Infineon Technologies redefines efficiency in Bipolar Transistor Arrays with its ultra-low noise characteristics. Perfect for RF modules, oscillators, and ADC/DAC circuits, this Discrete Semiconductor Product minimizes signal distortion in high-frequency applications. Automotive infotainment systems and IoT devices benefit from its fast response time and energy-saving operation. Backed by Infineon Technologies s quality assurance, the BC847SH6730XTMA1 guarantees 100% testing for parameter consistency across all arrayed transistors.
Specifications
- Product Status: Last Time Buy
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 250mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-6
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