BC850CWE6327HTSA1
Infineon Technologies
Infineon Technologies
TRANS NPN 45V 0.1A SOT-323
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Experience unmatched performance with the BC850CWE6327HTSA1 Bipolar Junction Transistor (BJT) by Infineon Technologies. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the BC850CWE6327HTSA1 delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Infineon Technologies for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
- Power - Max: 250 mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323
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