BC858BHZGT116
Rohm Semiconductor
Rohm Semiconductor
TRANS PNP 30V 0.1A SST3
$0.38
Available to order
Reference Price (USD)
1+
$0.38000
500+
$0.3762
1000+
$0.3724
1500+
$0.3686
2000+
$0.3648
2500+
$0.361
Exquisite packaging
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Enhance your circuit designs with the BC858BHZGT116 Bipolar Junction Transistor (BJT) from Rohm Semiconductor. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The BC858BHZGT116 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Rohm Semiconductor to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Not For New Designs
- Transistor Type: -
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 5V
- Power - Max: 200 mW
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SST3
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