BC879,112
NXP USA Inc.
NXP USA Inc.
TRANS NPN DARL 80V 1A TO92-3
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The BC879,112 from NXP USA Inc. is a high-quality Bipolar Junction Transistor (BJT) designed for precision and durability. This single BJT transistor is perfect for applications requiring fast switching and low power consumption, such as portable electronics and IoT devices. With its compact size and robust construction, the BC879,112 is a reliable choice for both commercial and industrial use. Trust NXP USA Inc. to provide top-tier discrete semiconductor products that enhance the performance and longevity of your electronic systems.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
- Power - Max: 830 mW
- Frequency - Transition: 200MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92-3
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