BCP5216H6327XTSA1
Infineon Technologies
Infineon Technologies
TRANS PNP 60V 1A SOT223-4
$0.15
Available to order
Reference Price (USD)
1+
$0.15226
500+
$0.1507374
1000+
$0.1492148
1500+
$0.1476922
2000+
$0.1461696
2500+
$0.144647
Exquisite packaging
Discount
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Experience unmatched performance with the BCP5216H6327XTSA1 Bipolar Junction Transistor (BJT) by Infineon Technologies. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the BCP5216H6327XTSA1 delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Infineon Technologies for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Not For New Designs
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
- Power - Max: 2 W
- Frequency - Transition: 125MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4-10
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