BCP5310E6327HTSA1
Infineon Technologies
Infineon Technologies
TRANS PNP 80V 1A SOT223-4
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BCP5310E6327HTSA1 by Infineon Technologies is a premium Bipolar Junction Transistor (BJT) designed for superior performance in various electronic applications. This single BJT transistor features high current handling and fast switching speeds, making it ideal for power management and control systems. Commonly used in automotive electronics, LED drivers, and power supplies, the BCP5310E6327HTSA1 ensures efficient and stable operation. Backed by Infineon Technologies's reputation for quality, this transistor is a trusted choice for engineers and designers seeking reliable discrete semiconductor solutions.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
- Power - Max: 2 W
- Frequency - Transition: 125MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4-10
Related Products
onsemi
BSS64LT1
onsemi
KSD5041PTA
onsemi
FMBSA06
onsemi
MPSA44RLRAG
WeEn Semiconductors
BUJ100LR,412
Panasonic Electronic Components
2SB1321A0A
Toshiba Semiconductor and Storage
2SA1930,Q(J
Bourns Inc.
BDW83-S
onsemi
BCW33LT1
Micro Commercial Co