BCP5316H6327XTSA1
Infineon Technologies
Infineon Technologies
TRANS PNP 80V 1A SOT223-4
$0.31
Available to order
Reference Price (USD)
1+
$0.30840
500+
$0.305316
1000+
$0.302232
1500+
$0.299148
2000+
$0.296064
2500+
$0.29298
Exquisite packaging
Discount
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The BCP5316H6327XTSA1 Bipolar Junction Transistor (BJT) from Infineon Technologies is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the BCP5316H6327XTSA1 is a reliable component for demanding applications. Infineon Technologies's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Not For New Designs
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
- Power - Max: 2 W
- Frequency - Transition: 125MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4-24
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Infineon Technologies