BCR 119 E6433
Infineon Technologies
Infineon Technologies
TRANS PREBIAS NPN 200MW SOT23-3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BCR 119 E6433 represents Infineon Technologies's commitment to innovation in discrete semiconductors. This pre-biased single BJT transistor excels in: Automated test equipment HVAC control boards Robotics servo drives With hFE matching within 10% across production lots, it guarantees consistent performance. Its 50V VCEO rating handles demanding industrial environments with ease.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 4.7 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 150 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
Related Products
onsemi
FJN3313RBU
Panasonic Electronic Components
UNR921NJ0L
Panasonic Electronic Components
UNR211H00L
Panasonic Electronic Components
UNR91A0G0L
onsemi
FJN3302RTA
Toshiba Semiconductor and Storage
RN2104CT(TPL3)
Infineon Technologies
BCR 519 E6327
Panasonic Electronic Components
DRA2114E0L
Diodes Incorporated
DDTC125TUA-7-F
onsemi