BCR 135 B6327
Infineon Technologies
Infineon Technologies
TRANS PREBIAS NPN 200MW SOT23-3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BCR 135 B6327 by Infineon Technologies sets new benchmarks for single BJT transistors. Featuring moisture-resistant packaging (MSL-3 rated) and 8ns switching speed, it's the preferred choice for: Drone motor controllers Solar microinverters POS terminal printers Backed by Infineon Technologies's global technical support and 5-year warranty for peace of mind.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 150 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
Related Products
Rohm Semiconductor
DTC143ZUBHZGTL
Panasonic Electronic Components
DRC5124X0L
Fairchild Semiconductor
FJV4113RMTF
NXP USA Inc.
PDTD123EK,115
Panasonic Electronic Components
UNR92A3G0L
Panasonic Electronic Components
DRA3143Y0L
Panasonic Electronic Components
UNR422400A
Toshiba Semiconductor and Storage
RN1117(T5L,F,T)
Infineon Technologies
BCR142B6327HTLA1
Infineon Technologies