BCR 135T E6327
Infineon Technologies
Infineon Technologies
TRANS PREBIAS NPN 250MW SC75
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BCR 135T E6327 represents Infineon Technologies's commitment to innovation in discrete semiconductors. This pre-biased single BJT transistor excels in: Automated test equipment HVAC control boards Robotics servo drives With hFE matching within 10% across production lots, it guarantees consistent performance. Its 50V VCEO rating handles demanding industrial environments with ease.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 150 MHz
- Power - Max: 250 mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: PG-SC-75
Related Products
Panasonic Electronic Components
UNRL11500A
Infineon Technologies
BCR 114L3 E6327
Infineon Technologies
BCR 133T E6327
onsemi
MMUN2113LT1
NXP USA Inc.
PDTA143ZK,115
NXP USA Inc.
PDTC124XE,115
Panasonic Electronic Components
DRA2124X0L
Diodes Incorporated
DDTD143EC-7-F
NXP USA Inc.
PDTC143ES,126
NXP USA Inc.