BCR 162L3 E6327
Infineon Technologies
Infineon Technologies
TRANS PREBIAS PNP 250MW TSLP-3
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Engineers choose BCR 162L3 E6327 for its exceptional linearity in amplification circuits. Infineon Technologies's pre-biased BJT transistor demonstrates 0.1 A ultra-low cutoff current, making it indispensable for medical equipment and precision instrumentation. The TO-92 package ensures easy integration into existing designs. Discover why global OEMs prefer this solution for telecom infrastructure and renewable energy systems.
Specifications
- Product Status: Discontinued at Digi-Key
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 4.7 kOhms
- Resistor - Emitter Base (R2): 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200 MHz
- Power - Max: 250 mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: PG-TSLP-3-4
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