BCR10PNH6327XTSA1
Infineon Technologies
Infineon Technologies
TRANS NPN/PNP PREBIAS SOT363
$0.44
Available to order
Reference Price (USD)
3,000+
$0.07259
6,000+
$0.06594
15,000+
$0.05928
30,000+
$0.05595
75,000+
$0.05040
Exquisite packaging
Discount
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The BCR10PNH6327XTSA1 from Infineon Technologies represents the pinnacle of pre-biased BJT array technology. Designed for high-density circuits, this product features low on-resistance and fast switching speeds, ideal for digital and analog applications. Its robust construction ensures reliable operation in telecommunications, computing, and industrial machinery. Infineon Technologies's expertise in semiconductor manufacturing guarantees that the BCR10PNH6327XTSA1 meets the highest industry standards. Whether you're designing advanced control systems or simple electronic switches, this transistor array offers unparalleled performance and versatility.
Specifications
- Product Status: Not For New Designs
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 130MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-PO
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