BCR196E6327HTSA1
Infineon Technologies
Infineon Technologies
TRANS PREBIAS PNP 200MW SOT23-3
$0.03
Available to order
Reference Price (USD)
39,000+
$0.02537
Exquisite packaging
Discount
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The BCR196E6327HTSA1 by Infineon Technologies sets new benchmarks for single BJT transistors. Featuring moisture-resistant packaging (MSL-3 rated) and 8ns switching speed, it's the preferred choice for: Drone motor controllers Solar microinverters POS terminal printers Backed by Infineon Technologies's global technical support and 5-year warranty for peace of mind.
Specifications
- Product Status: Not For New Designs
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 70 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 47 kOhms
- Resistor - Emitter Base (R2): 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 150 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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