BCV26_L99Z
onsemi
onsemi
TRANS PNP DARL 30V 1.2A SOT23-3
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Experience unmatched performance with the BCV26_L99Z Bipolar Junction Transistor (BJT) by onsemi. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the BCV26_L99Z delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose onsemi for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 1.2 A
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
- Power - Max: 350 mW
- Frequency - Transition: 220MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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