BCV47E6393HTSA1
Infineon Technologies
Infineon Technologies
TRANS NPN DARL 60V 0.5A SOT23
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BCV47E6393HTSA1 Bipolar Junction Transistor (BJT) by Infineon Technologies is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the BCV47E6393HTSA1 provides consistent performance in demanding applications. Choose Infineon Technologies for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Last Time Buy
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
- Power - Max: 360 mW
- Frequency - Transition: 170MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
Related Products
Rohm Semiconductor
2SB1561T100Q
Rohm Semiconductor
QST6TR
Microchip Technology
JANTX2N3724
onsemi
BC308ATFR
Panasonic Electronic Components
2SD13280TL
Microchip Technology
JANTX2N1716S
onsemi
MUN2212T3
onsemi
2N3903RLRM
Fairchild Semiconductor
KSA1015GRBU
Diodes Incorporated