BCW60B
Infineon Technologies
Infineon Technologies
TRANS NPN 32V 0.1A SOT23-3
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Optimize your electronic systems with the BCW60B Bipolar Junction Transistor (BJT) from Infineon Technologies. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the BCW60B delivers superior performance in diverse environments. Infineon Technologies's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 32 V
- Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
- Current - Collector Cutoff (Max): 20nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
- Power - Max: 350 mW
- Frequency - Transition: 125MHz
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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