BCW66KHE6327HTSA1
Infineon Technologies
Infineon Technologies
TRANS NPN 45V 0.8A SOT23
$0.43
Available to order
Reference Price (USD)
3,000+
$0.04819
6,000+
$0.04237
15,000+
$0.03654
30,000+
$0.03460
75,000+
$0.03265
150,000+
$0.02942
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the BCW66KHE6327HTSA1 Bipolar Junction Transistor (BJT) from Infineon Technologies, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the BCW66KHE6327HTSA1 is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose Infineon Technologies for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Not For New Designs
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
- Power - Max: 500 mW
- Frequency - Transition: 170MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
Related Products
NXP USA Inc.
PBSS4160QA147
Rohm Semiconductor
MMSTA06T146
Rohm Semiconductor
2SA2071T100Q
onsemi
2SB824R
Diodes Incorporated
FZT857TA
Microchip Technology
JANTXV2N5682
Solid State Inc.
2N4920
Microchip Technology
JANKCA2N2484
onsemi
SJ83180
onsemi