BCX5310H6327XTSA1
Infineon Technologies
Infineon Technologies
TRANS PNP 80V 1A SOT89
$0.13
Available to order
Reference Price (USD)
7,000+
$0.12027
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with the BCX5310H6327XTSA1 Bipolar Junction Transistor (BJT) by Infineon Technologies. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the BCX5310H6327XTSA1 is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust Infineon Technologies for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Not For New Designs
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
- Power - Max: 2 W
- Frequency - Transition: 125MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PG-SOT89
Related Products
Nexperia USA Inc.
PHPT60406NYX
Fairchild Semiconductor
KSA1182YMTF
Fairchild Semiconductor
KSC2883OTF
Nexperia USA Inc.
PDTA124XM,315
NTE Electronics, Inc
MJ11028
Diodes Incorporated
DZT951-13
Comchip Technology
AMMBT5551-HF
NTE Electronics, Inc
NTE186
NXP USA Inc.
BC847CW/DG/B2115
Diodes Incorporated