BD13910S
onsemi
onsemi
POWER BIPOLAR TRANSISTOR, 1.5A,
$0.22
Available to order
Reference Price (USD)
1+
$0.49000
10+
$0.41700
100+
$0.31110
500+
$0.24440
1,000+
$0.18885
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with the BD13910S Bipolar Junction Transistor (BJT) from onsemi. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The BD13910S is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust onsemi to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.5 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
- Power - Max: 1.25 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126-3
Related Products
Rohm Semiconductor
2SC4083T106N
STMicroelectronics
2STR1215
onsemi
MJE182G
onsemi
KSH31CTF
Infineon Technologies
SMBTA06E6327HTSA1
Renesas Electronics America Inc
NFD15-T-AZ
Diotec Semiconductor
BC848CW
Nexperia USA Inc.
PMST2369,115
Toshiba Semiconductor and Storage
2SA1162-Y,LF
Infineon Technologies