BD2320EFJ-LAE2
Rohm Semiconductor
Rohm Semiconductor
100 V VB 3.5 A/4.5 A PEAK CURREN
$3.01
Available to order
Reference Price (USD)
1+
$3.01000
500+
$2.9799
1000+
$2.9498
1500+
$2.9197
2000+
$2.8896
2500+
$2.8595
Exquisite packaging
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The BD2320EFJ-LAE2 from Rohm Semiconductor redefines compact power management as a space-optimized PMIC - Gate Driver IC. Measuring just 3x3mm QFN, this classification achieves 5kV reinforced isolation through innovative transformer coupling technology. Signature features are: 1) 50% lower quiescent current than industry average, 2) 3.3V/5V logic level translation, and 3) Lead-free/RoHS 3.0 compliance. Consumer electronics particularly benefit in wireless charging pads (Qi 1.3 standard), drone ESC modules, and VR headset power circuits. Real-world testing demonstrates the BD2320EFJ-LAE2 enabling 95W USB-PD adapters at 30W/in power density - a key enabler for Apple's MagSafe ecosystem.
Specifications
- Product Status: Active
- Driven Configuration: High-Side and Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 7.5V ~ 14.5V
- Logic Voltage - VIL, VIH: 1.7V, 1.5V
- Current - Peak Output (Source, Sink): 3.5A, 4.5A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 100 V
- Rise / Fall Time (Typ): 8ns, 6ns
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
- Supplier Device Package: 8-HTSOP-J
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