BD239F-S
Bourns Inc.
Bourns Inc.
TRANS NPN 160V 2A TO220
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with the BD239F-S Bipolar Junction Transistor (BJT) from Bourns Inc.. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the BD239F-S delivers superior performance in diverse environments. Bourns Inc.'s commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 160 V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 200mA, 1A
- Current - Collector Cutoff (Max): 300µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V
- Power - Max: 2 W
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
Related Products
Rohm Semiconductor
2SD1468STPR
Infineon Technologies
BC 846B B5003
onsemi
MPSA75RLRAG
Infineon Technologies
BC848BWE6327BTSA1
onsemi
BC550CG
Rohm Semiconductor
2SD2118TLQ
Fairchild Semiconductor
KSP24TA
onsemi
BD17810STU
Diodes Incorporated
FZT2907ATA
Panasonic Electronic Components