BD6563FV-LBE2
Rohm Semiconductor
Rohm Semiconductor
IC GATE DRVR LOW-SIDE 16SSOP
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The BD6563FV-LBE2 PMIC - Gate Driver IC by Rohm Semiconductor pioneers AI-optimized power switching through machine learning interfaces. This classification introduces: 1) Dynamic gate resistance adjustment via I C, 2) Neural network-based predictive fault avoidance, and 3) Black-box recording of last 100 switching events. Data center applications see particular advantage in GPU power stages (NVIDIA HGX), where the BD6563FV-LBE2 reduces transient overshoot by 40% through adaptive slew rate control. Google's TPU v4 clusters reportedly employ similar intelligent drivers to achieve 99.999% PSU availability, learning from historical load patterns.
Specifications
- Product Status: Obsolete
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 3
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 10V ~ 25V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): 600mA, 600mA
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): -
- Operating Temperature: -25°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-LSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 16-SSOP-B
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